Hybrid interfaces in polymer-based electronics

Citation
G. Greczynski et al., Hybrid interfaces in polymer-based electronics, SYNTH METAL, 121(1-3), 2001, pp. 1625-1628
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1625 - 1628
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1625:HIIPE>2.0.ZU;2-E
Abstract
Sandwich-style interfaces of Al/LiF/poly(9,9-dioctyl-fluorene) and Al/CsF/p oly(9,9-dioctyl-fluorene) have been studied using X-ray and ultraviolet pho toelectron spectroscopy. In the case of LiF-deposition on poly(9,9-dioctyl- fluorene) films, doping did not occur, nor did the LiF dissociate upon Al-d eposition. No significant shifts in binding energy of the core levels, or a ny changes in the work function were detected. However, for the Al/LiF/poly (9,9-dioctyl-fluorene) interface, there was no degradation of the pi -elect ronic structure, unlike the case for Al deposited directly unto poly(9,9-di octyl-fluorene). For the Al/CsF/poly(9,9-dioctyl-fluorene) interface, the C sF dissociated upon Al deposition, with the Cs likely n-doping the polymer at the interface. When deposited onto an Al surface, CsF also was found to dissociate at the interface but remaining in the CsF form away from the Al surface. Vacuum level alignment occurs for poly(9,9-dioctyl-fluorene) films spun onto 'metal' substrates. The hole-injection barrier in poly(9,9-dioct yl-fluorene)-based LEDs is hence determined by the difference between anode work function and the polymer ionization potential.