A field-effect transistor (FET) having poly(o-methoxyaniline) (POMA) as the
active layer was built on a SiO2-Si substrate which acts as the gate. The
POMA layer was deposited by spin coating on the substrate interdigitated wi
th gold lines and which acts either as the source or drain contact. A tenta
tive theoretical model based on the Schottky gold/polymer interface contact
and on the electronic properties of the POMA film was developed to explain
the characteristic behavior of the FET device.