An electrical study of a thin film poly(o-methoxyaniline) field effect transitor

Authors
Bianchi, RF Onmori, RK Goncalves, D de Andrade, AM Faria, RM Irene, EA
Citation
Rf. Bianchi et al., An electrical study of a thin film poly(o-methoxyaniline) field effect transitor, SYNTH METAL, 121(1-3), 2001, pp. 1687-1688
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1687 - 1688
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1687:AESOAT>2.0.ZU;2-W
Abstract
A field-effect transistor (FET) having poly(o-methoxyaniline) (POMA) as the active layer was built on a SiO2-Si substrate which acts as the gate. The POMA layer was deposited by spin coating on the substrate interdigitated wi th gold lines and which acts either as the source or drain contact. A tenta tive theoretical model based on the Schottky gold/polymer interface contact and on the electronic properties of the POMA film was developed to explain the characteristic behavior of the FET device.