Energy level alignment and band bending at TPD/metal interfaces studied byKelvin probe method

Citation
N. Hayashi et al., Energy level alignment and band bending at TPD/metal interfaces studied byKelvin probe method, SYNTH METAL, 121(1-3), 2001, pp. 1717-1718
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
121
Issue
1-3
Year of publication
2001
Pages
1717 - 1718
Database
ISI
SICI code
0379-6779(20010315)121:1-3<1717:ELAABB>2.0.ZU;2-T
Abstract
In order to examine the validity of Mott-Schottky model at organic/metal in terfaces, the position of the vacuum level (VL) of triphenyldiamine (TPD) f ilm formed on five metal substrates was measured as a function of the film- thickness by Kelvin probe method in ultrahigh vacuum (UHV). At all the inte rfaces, sharp shifts of the VL were observed within 1 nm thickness. Further deposition of TPD up to 100 nm did not change the position of the VL indic ating no band bending at these interfaces. These findings clearly demonstra te the Fermi level alignment between metal and bulk TPD solid in UHV is not established within a typical thickness of real devices.