The electrical transport properties of iodine doped polyacetylene (PA) nano
fibers were measured as function of temperature in micron and sub-micron sc
ale. Polyacetylene fiber network measured in micron scale shows weaker temp
erature dependence of resistivity and smaller negative magnetoresistance (M
R) at T=1.5K compared to those of bulk PA film. The reaction of Au electrod
es with dopant became serious in submicron experiment, so that stripes of P
t electrodes with 100nm separation were patterned on top of the SiO2 substr
ate to prevent the reaction, Non-ohmic I-V charactersitics are observed in
PA nanofiber, The gate dependence shows the charge carrier to be hole with
mobility mu (FET) similar to 4.4x10(-5)cm(2)/Vs at 233K. The non-ohmic I-V
dependence at high electric fields could be originated from the soliton tun
neling conduction in PA nanofiber.