Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers

Authors
Park, JG Kim, GT Krstic, V Lee, SH Kim, B Roth, S Burghard, M Park, YW
Citation
Jg. Park et al., Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers, SYNTH METAL, 119(1-3), 2001, pp. 469-470
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
119
Issue
1-3
Year of publication
2001
Pages
469 - 470
Database
ISI
SICI code
0379-6779(20010315)119:1-3<469:GEITIC>2.0.ZU;2-Q
Abstract
The I-V characteristics of iodine doped polyacetylene (PA) nanofibers were measured as function of temperature. Platinum electrodes on top of SiO2 sub strates were used to prevent reaction with iodine dopant. The distance betw een the two electrodes is approximately 100 nm. Upon iodine doping, non-ohm ic I-V characteristics are observed. The gate dependence shows the charge c arrier to be hole with a mobility mu (FET) similar to 4.4x10(-5)cm(2)/Vs at 233K.