Silicon structures with dielectric insulation obtained by vertical anisotropic etching

Authors
Guk, EG Tkachenko, AG Tokranova, NA Granitsyna, LS Astrova, EV Podlaskin, BG Nashchekin, AV Shul'pina, IL Rutkovskii, SV
Citation
Eg. Guk et al., Silicon structures with dielectric insulation obtained by vertical anisotropic etching, TECH PHYS L, 27(5), 2001, pp. 381-383
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
5
Year of publication
2001
Pages
381 - 383
Database
ISI
SICI code
1063-7850(2001)27:5<381:SSWDIO>2.0.ZU;2-E
Abstract
Silicon structures with vertical insulating walls were prepared for multiel ement devices with high element packing density requiring deep pockets in s ilicon single crystals. The technology is based on the anisotropic etching of (110)-oriented silicon crystals and filling the etch grooves with an org anosilicon polymer based suspension. (C) 2001 MAIK "Nauka/Interperiodica".