The oxide layer charging in SIMOX structures

The depth profile analysis, based on the measurement of high-frequency capa citance-voltage characteristics of an electrolyte-insulator-semiconductor s ystem in the course of the layer-by-layer insulator removal by etching, sho wed that the formation of a SIMOX structure is accompanied by the appearanc e of positively charged defects in the oxide layer at the oxide- silicon in terface. A change in the charge state of the SIMOX structures under the act ion of an applied electric field, near ultraviolet (UV) radiation, and low- temperature annealing was studied. (C) 2001 MAIK "Nauka/ Interperiodica".