An improved microchip thin film transformer formed by vacuum evaporation and sputtering

Citation
Hw. Zhang et al., An improved microchip thin film transformer formed by vacuum evaporation and sputtering, VACUUM, 62(1), 2001, pp. 1-6
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
62
Issue
1
Year of publication
2001
Pages
1 - 6
Database
ISI
SICI code
0042-207X(20010525)62:1<1:AIMTFT>2.0.ZU;2-V
Abstract
A microchip thin film transformer which is composed of an I-shaped [CoZrNb/ SiOx](m) magnetic layer and wound with Cu thin film coils fabricated by usi ng a mask vacuum evaporation and sputtering composited process has been inv estigated. Comparing the CoZrNb core with [CoZrNb/SiOx](m) core of thin fil m transformer, it is shown that the multilayer thin films have more advanta ges than a single magnetic layer in their of soft magnetic properties, espe cially the permeability (mu) and coercivity (H-c). The microchip transforme r has a relatively high inductance of 0.4-1.0 muH for a ratio of primary tu rns to secondary coil turn's of 3 : 1 and 3 : 2, and has a high e value of 4-12. The thin film transformer can be operated in an integrated micro-swit ching converter at a frequency between 1 kHz and 10 MHz. (C) 2001 Elsevier Science Ltd. All rights reserved.