Characterization of AgGa0.25In0.75Se2 thin films

AgGa0.25In0.75Se2 thin films prepared by the hash evaporation technique ont o Coming 7059 glass substrates at T-s = 623-643 K were single phase, nearly stoichiometric and polycrystalline with a strong (1 1 2) preferred orienta tion. The electrical resistivity of the films was in the range 20-95 Ohm cm . Thermoelectric power and Hall effect measurements indicated p-type conduc tion in the films. The temperature dependence of the electrical conductivit y suggested that above 460 K the conduction mechanism was intrinsic, wherea s extrinsic/impurity conduction dominated in the range 303-433 K. (C) 2001 Elsevier Science Ltd. All rights reserved.