This work deals with Y2O3 thin films prepared by r.f. diode sputtering for
application in electrochemical sensors. The influence of annealing on selec
ted electrical and mechanical properties of Y2O3 thin films has been studie
d. With increasing annealing temperature the values of electrical strength
and electrical resistivity increase, whereas, the values of relative permit
tivity and Young's modulus decrease. Yttrium oxide films have a polycrystal
line structure without cubic structural change caused by annealing. The cha
nge from compressive to tensile stresses takes place in Y2O3 films with inc
reasing temperature. The properties of Y-2 O-3 thin films are comparable wi
th the published data. The Y2O3 film was used as an insulation layer in ver
tically arranged electrodes in a microelectrochemical cell. The redox recyc
ling phenomenon was demonstrated with the redox couple [Fe(CN)(6)](3-/4-).
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