Quantitative analysis of a-Si1-xCx : H thin films by vibrational spectroscopy and nuclear methods

Citation
D. Gracin et al., Quantitative analysis of a-Si1-xCx : H thin films by vibrational spectroscopy and nuclear methods, VACUUM, 61(2-4), 2001, pp. 303-308
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
61
Issue
2-4
Year of publication
2001
Pages
303 - 308
Database
ISI
SICI code
0042-207X(20010514)61:2-4<303:QAOA:H>2.0.ZU;2-X
Abstract
Thin amorphous hydrogenated silicon-carbon films, a-Si1-xCx:H were deposite d by magnetron sputtering on glass and mono-crystalline substrates with car bon content from x = 0.2 to 1, wide variation of hydrogen concentration and different degrees of structural ordering. The obtained films were investig ated by Fourier transform infra-red (FTIR) spectroscopy, Raman spectroscopy , Rutherford backscattering (RBS) and elastic recoil detection analysis (ER DA). The results of the quantitative analyses obtained by the above-mention ed techniques were compared. It has been concluded that the applied vibrati onal methods can be used quantitatively which enables estimation of the deg ree of chemical ordering in the analysed samples. (C) 2001 Elsevier Science Ltd. All rights reserved.