Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs

Authors
Lalinsky, T Skriniarova, J Kuzmik, J Hasenohrl, S Fox, A Tomaska, M Mozolova, Z Kovacik, T Krajcer, A Kordos, P
Citation
T. Lalinsky et al., Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs, VACUUM, 61(2-4), 2001, pp. 323-327
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
61
Issue
2-4
Year of publication
2001
Pages
323 - 327
Database
ISI
SICI code
0042-207X(20010514)61:2-4<323:TAPO1N>2.0.ZU;2-Z
Abstract
The technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pseu domorphic HEMTs based on a very narrow ZnGaAs channel are presented. DC cha racterization in the temperature range between 300 and 77 K is performed to explain some anomalous effects in the device low-temperature performance. In addition to DC characterization, high-speed operation of this device is investigated, Current gain cut-off frequency (f(t)), and maximum oscillatio n frequency (f(max)) were found to be 53 and 150 GHz, respectively. (C) 200 1 Elsevier Science Ltd. All rights reserved.