Improved analyzer multilayers for aluminium and boron detection with x-rayfluorescence

Authors
Ricardo, P Wiesmann, J Nowak, C Michaelsen, C Bormann, R
Citation
P. Ricardo et al., Improved analyzer multilayers for aluminium and boron detection with x-rayfluorescence, APPL OPTICS, 40(16), 2001, pp. 2747-2754
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
40
Issue
16
Year of publication
2001
Pages
2747 - 2754
Database
ISI
SICI code
0003-6935(20010601)40:16<2747:IAMFAA>2.0.ZU;2-S
Abstract
We have developed improved analyzer multilayers for the detection of alumin ium (AI) and boron (B) on silicon (Si) wafers with wavelength-dispersive x- ray fluorescence spectrometers. For the detection of Al on Si wafers we sho w that WSi2/Si and Ta/Si multilayers provide detection limits that are 42% and 60% better, respectively, than with currently used W/Si multilayers. Fo r the detection of B on Si wafers we show that La/B4C multilayers improve t he detection limit by similar to 28% compared with a conventionally used Ma /B4C multilayer. (C) 2001 Optical Society of America.