Experimental and theoretical studies of the photovoltaic shift in the posit
ion of the diffraction efficiency maximum of holograms recorded in LiNbO3 f
or the case of optimal electric field multiplexing are described. The exper
imental data are explained using a model in which the bulk photovoltaic fie
ld is excited in a crystal that is electrically connected with a low loadin
g resistance. We suggest that the surface conductivity of the crystal can p
lay an important role in the formation of this effective loading resistance
.