An intersubband Raman laser has been realized in an artificial GaAs/AlGaAs
three-level quantum-well structure. A CO2 laser in resonance with the one-t
o-three level transition is used as the pump, while the lasing emission occ
urs via the three-to-two level transition. The one-to-two level spacing is
designed to be in resonance with the AlAs-like longitudinal optical phonon
mode, favoring the Raman process. This work presents an alternative mechani
sm for realizing intersubband lasers and opens up new possibilities in reac
hing the far infrared region and achieving room-temperature operation. (C)
2001 American Institute of Physics.