Citation
Zl. Liau et Aa. Liau, Nanometer air gaps in semiconductor wafer bonding, APPL PHYS L, 78(23), 2001, pp. 3726-3728
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
78
Issue
23
Year of publication
2001
Pages
3726 - 3728
Database
ISI
SICI code
0003-6951(20010604)78:23<3726:NAGISW>2.0.ZU;2-V
Abstract
Evanescent-wave tunneling of visible light is shown to be sensitive to the
nanometer air gaps between dielectrics of high refractive indices. The narr
ow air gap in molecular-force bonded GaP/GaP was then measured to be 1.3 nm
. (C) 2001 American Institute of Physics.