Molecular random access memory cell

Authors
Reed, MA Chen, J Rawlett, AM Price, DW Tour, JM
Citation
Ma. Reed et al., Molecular random access memory cell, APPL PHYS L, 78(23), 2001, pp. 3735-3737
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
23
Year of publication
2001
Pages
3735 - 3737
Database
ISI
SICI code
0003-6951(20010604)78:23<3735:MRAMC>2.0.ZU;2-Z
Abstract
Electronically programmable memory devices utilizing molecular self-assembl ed monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit re tention times > 15 min have been observed. (C) 2001 American Institute of P hysics.