Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

Authors
Schneider, HC Fischer, AJ Chow, WW Klem, JF
Citation
Hc. Schneider et al., Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser, APPL PHYS L, 78(22), 2001, pp. 3391-3393
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
22
Year of publication
2001
Pages
3391 - 3393
Database
ISI
SICI code
0003-6951(20010528)78:22<3391:TDOLTI>2.0.ZU;2-K
Abstract
We present theoretical and experimental results for the temperature depende nce of threshold current in an InGaAsN/GaAs vertical-cavity surface-emittin g laser (VCSEL) operating at 1.3 mum under continuous-wave current injectio n. Using a microscopic many-body laser theory, good agreement with experime ntal data is obtained. The influence of radiative and nonradiative recombin ation processes on the threshold current-density is investigated theoretica lly. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made. (C ) 2001 American Institute of Physics.