Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Authors
Lee, CT Yu, QX Tang, BT Lee, HY Hwang, FT
Citation
Ct. Lee et al., Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction, APPL PHYS L, 78(22), 2001, pp. 3412-3414
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
22
Year of publication
2001
Pages
3412 - 3414
Database
ISI
SICI code
0003-6951(20010528)78:22<3412:IOITOO>2.0.ZU;2-Q
Abstract
The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN lay er was investigated. The best thermal annealing condition achieved for ohmi c contact was 5 min at 500 degreesC, in hydrogen ambient. The measured spec ific contact resistance was 3x10(-4) Omega cm(2). Ohmic formation mechanism s would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the re duction conduction band offset due to the quantum confinement effects in th e thin ZnO layer. (C) 2001 American Institute of Physics.