Suppression of phase separation in (AlAs)(2 ML)(InAs)(2 ML) superlattices using Al0.48In0.52As monolayer insertions

Citation
Sr. Lee et al., Suppression of phase separation in (AlAs)(2 ML)(InAs)(2 ML) superlattices using Al0.48In0.52As monolayer insertions, APPL PHYS L, 78(22), 2001, pp. 3421-3423
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
22
Year of publication
2001
Pages
3421 - 3423
Database
ISI
SICI code
0003-6951(20010528)78:22<3421:SOPSI(>2.0.ZU;2-H
Abstract
Al0.48In0.52As monolayers (ML) are inserted at the binary-compound interfac es of (AlAs)(2 ML)(InAs)(2 ML) short-period superlattices (SPSs) during gro wth on (001) InP. The insertion of Al0.48In0.52As interlayers greater than 2 ML thick tends to suppress the phase separation that normally occurs duri ng molecular beam epitaxy of the SPS. The degree of suppression is a sensit ive function of both the monolayer-scale thickness, and the intraperiod gro wth sequence, of the interlayers in the SPS. Given this sensitivity to mono layer-scale variations in the surface-region composition, we propose that c yclical phase transition of the reconstructed surface initiates SPS decompo sition. (C) 2001 American Institute of Physics.