Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

An experimental concept of studying shifts between concentration-versus-dep th profiles of vacancy and interstitial-type defects in ion-implanted silic on is demonstrated. This concept is based on deep level transient spectrosc opy measurements where the filling pulse width is varied. The vacancy profi le, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon-interstitial carbon pair, are obt ained at the same sample temperature and can be recorded with a high relati ve depth resolution. For 6 MeV B-11 ions, the peak of the interstitial prof ile is displaced by similar to0.5 mum towards larger depths compared to tha t of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms. (C) 2001 American Institute of Phy sics.