Electrical transients in the ion-beam-induced nitridation of silicon

We have studied the dynamics of the initial stages of silicon nitride forma tion on silicon surfaces under nitrogen beam bombardment in the secondary i on mass spectrometry apparatus. We have shown that the secondary ion signal exhibits damped oscillations below the critical impact angle for nitride f ormation. We have described this oscillatory response by a second-order dif ferential equation and argued that it is initiated by some fluctuations in film thickness followed by the fluctuations in surface charging. (C) 2001 A merican Institute of Physics.