Over 1.5 mu m light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

We demonstrated the 1.52 mum light emission at room temperature from self-a ssembled InAs quantum dots embedded in the In0.45Ga0.55As strain-reducing l ayer. By capping InAs quantum dots with an InGaAs strain-reducing layer ins tead of GaAs, the photoluminescence peak of InAs quantum dots can be contro lled by changing the indium composition of the InGaAs strain-reducing layer . The full width at half maximum is as narrow as 22 meV. The wavelength of 1.52 mum is the longest wavelength so far achieved in self-assembled InAs q uantum dots, which would be promising to quantum-dot lasers on GaAs substra te for application to light sources in long-wavelength optical communicatio n systems. (C) 2001 American Institute of Physics.