Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells

The effect of atomic hydrogen on the electronic properties of (InGa)(AsN)/G aAs single quantum wells (QWs) has been investigated by photoluminescence ( PL) spectroscopy. For increasing hydrogen dose, the band gap of the materia l increases until it reaches the value corresponding to a N-free reference QW. The band gap variation is accompanied by an increase of the line width of the PL spectra and a decrease of the PL efficiency. Annealing at 500 deg reesC fully recovers the band gap and PL line width the sample had before h ydrogenation. These results are accounted for by the formation of N-H compl exes, which lowers the effective nitrogen content in the well. (C) 2001 Ame rican Institute of Physics.