Influence of the local As antisite distribution on ferromagnetism in (Ga, Mn)As

Citation
S. Sanvito et Na. Hill, Influence of the local As antisite distribution on ferromagnetism in (Ga, Mn)As, APPL PHYS L, 78(22), 2001, pp. 3493-3495
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
22
Year of publication
2001
Pages
3493 - 3495
Database
ISI
SICI code
0003-6951(20010528)78:22<3493:IOTLAA>2.0.ZU;2-X
Abstract
The effect of the inclusion of As antisites in the diluted magnetic semicon ductor (Ga, Mn)As is studied within the density functional theory in the lo cal spin density approximation. In the case of the homogeneous distribution of Mn ions, we find that the ferromagnetism is weakened by the presence of the antisites. This is due to the compensation of the free holes which med iate the long-range ferromagnetic order. In contrast, when two Mn ions are coupled through only one As ion, the ferromagnetic and antiferromagnetic st ates are comparable in energy. In this case, the magnetic ground state depe nds on: (i) the position of the As antisites relative to the Mn, and (ii) t he As antisite concentration. We explain our results using a model of compe ting antiferromagnetic super exchange and ferromagnetic double exchange via localized Zener carriers. (C) 2001 American Institute of Physics.