Femtosecond carrier dynamics in an asymmetrically excited GaAs photoconductive switch

Citation
Md. Cummings et al., Femtosecond carrier dynamics in an asymmetrically excited GaAs photoconductive switch, APPL PHYS L, 78(22), 2001, pp. 3535-3537
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
22
Year of publication
2001
Pages
3535 - 3537
Database
ISI
SICI code
0003-6951(20010528)78:22<3535:FCDIAA>2.0.ZU;2-1
Abstract
We present a detailed analysis of the field screening and carrier dynamics which exist in the high-field region of an asymmetrically excited coplanar transmission line. Through time-resolved reflectivity measurements, it is f ound that the ballistic acceleration of carriers, and subsequent field scre ening, dominate the ultrashort electrical pulse generation. In addition, th e formation of an instantaneous macroscopic polarization and the creation o f coherently coupled plasmon-phonon modes are found to effect the electric field screening response. The results are in agreement with the field scree ning picture of edge-illuminated photoconduction and suggest that pulses as short as 110 fs can be generated. (C) 2001 American Institute of Physics.