LOW OPERATING CURRENT AND HIGH-TEMPERATURE OPERATION OF 650NM ALGAINPVISIBLE LASER-DIODES WITH REAL REFRACTIVE-INDEX GUIDED SELF-ALIGNED STRUCTURE

Authors
IMAFUJI O YURI M HASHIMOTO T ISHIDA M MANNOH M KAWATA T OGAWA H YOSHIKAWA A ITOH K
Citation
O. Imafuji et al., LOW OPERATING CURRENT AND HIGH-TEMPERATURE OPERATION OF 650NM ALGAINPVISIBLE LASER-DIODES WITH REAL REFRACTIVE-INDEX GUIDED SELF-ALIGNED STRUCTURE, Electronics Letters, 33(14), 1997, pp. 1223-1225
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
14
Year of publication
1997
Pages
1223 - 1225
Database
ISI
SICI code
0013-5194(1997)33:14<1223:LOCAHO>2.0.ZU;2-I
Abstract
High temperature operation at up to 90 degrees C has been achieved in 650nm-band AlGaInP visible laser diodes with a real refractive index g uided self-aligned structure using an AlInP current blocking layer. Th e operating current is as low as 45mA under CW operation at 60 degrees C and the characteristic temperature is 120K from 20 to 60 degrees C.