MOLECULAR-BEAM-EPITAXY GROWTH OF 1.3-MU-M HIGH-REFLECTIVITY ALGAASSB ALASSB BRAGG-MIRROR/

Authors
ALMUNEAU G GENTY F CHUSSEAU L BERTRU N FRAISSE B JACQUET J
Citation
G. Almuneau et al., MOLECULAR-BEAM-EPITAXY GROWTH OF 1.3-MU-M HIGH-REFLECTIVITY ALGAASSB ALASSB BRAGG-MIRROR/, Electronics Letters, 33(14), 1997, pp. 1227-1228
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
14
Year of publication
1997
Pages
1227 - 1228
Database
ISI
SICI code
0013-5194(1997)33:14<1227:MGO1HA>2.0.ZU;2-K
Abstract
The first high reflectivity (R = 97.7%) Al0.3Ga0.7As0.5Sb0.5/AlAs0.59S b0.41 Bragg mirror lattice matched to InP was obtained at 1.28 mu m by solid source molecular beam epitaxy. This result was achieved with on ly 15.5 periods in the stack. A comparison between the calculated and the measured Bragg mirror reflectivities shows a near perfect agreemen t.