PIEZOELECTRIC CHARGE-DENSITIES IN ALGAN GAN HFETS/

Authors
ASBECK PM YU ET LAU SS SULLIVAN GJ VANHOVE J REDWING J
Citation
Pm. Asbeck et al., PIEZOELECTRIC CHARGE-DENSITIES IN ALGAN GAN HFETS/, Electronics Letters, 33(14), 1997, pp. 1230-1231
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
14
Year of publication
1997
Pages
1230 - 1231
Database
ISI
SICI code
0013-5194(1997)33:14<1230:PCIAGH>2.0.ZU;2-T
Abstract
New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of similar to 5 x 10(13) cm(-2).x(Al) (where x(Al) is thr aluminium mol f raction in the AlGaN), which can be attributed to piezoelectric effect s. These have a significant influence on the design and behaviour of I II-V nitride HFETS.