EFFECTS OF PROTON IRRADIATION ON ALGAN INGAN/GAN GREEN LIGHT-EMITTING-DIODES/

Authors
OSINSKI M PERLIN P SCHONE H PAXTON AH TAYLOR EW
Citation
M. Osinski et al., EFFECTS OF PROTON IRRADIATION ON ALGAN INGAN/GAN GREEN LIGHT-EMITTING-DIODES/, Electronics Letters, 33(14), 1997, pp. 1252-1254
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
14
Year of publication
1997
Pages
1252 - 1254
Database
ISI
SICI code
0013-5194(1997)33:14<1252:EOPIOA>2.0.ZU;2-F
Abstract
The influence of proton irradiation on properties of commercial single -quantum-well AlGaN/InGaN/GaN green-light emitting diodes is studied. A dose of 2.3Mrad degraded the room-temperature light emission from th e irradiated area of the device, while the electrical device character istics remain practically unchanged. At low temperatures (similar or e qual to 15K), however, the light emission recovers almost entirely, in dicating the formation of a nonradiative recombination channel within the active layer of the device.