CHARACTERISTICS OF GAAS MISFET DEVICES USING LOW-TEMPERATURE-GROWN AL0.3GA0.7AS AS GATE INSULATOR

Authors
RAO RVVVJ CHONG TC LAU WS TAN LS LIM N
Citation
Rvvvj. Rao et al., CHARACTERISTICS OF GAAS MISFET DEVICES USING LOW-TEMPERATURE-GROWN AL0.3GA0.7AS AS GATE INSULATOR, Electronics Letters, 33(14), 1997, pp. 1258-1260
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
14
Year of publication
1997
Pages
1258 - 1260
Database
ISI
SICI code
0013-5194(1997)33:14<1258:COGMDU>2.0.ZU;2-X
Abstract
Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET de vices. An LT-Al0.3Ga0.7As MISFET, having a gate length of 2 mu m, exhi bited a transconductance of 161mS/mm, an I-DSS of 320mA/mm and a maxim um drain voltage of 44.7V, resulting in an I-V product of 1.65W/mm; it displayed improved frequency dispersion characteristics over that of an LT-GaAs MISFET.