LOW-THRESHOLD, COMPRESSIVELY-STRAINED INASP INGAASP AND STRAIN-COMPENSATED INASP/INGAP 1.3-MU-M LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM-EPITAXY/

Authors
UENOHARA H GOKHALE MR DRIES JC FORREST SR
Citation
H. Uenohara et al., LOW-THRESHOLD, COMPRESSIVELY-STRAINED INASP INGAASP AND STRAIN-COMPENSATED INASP/INGAP 1.3-MU-M LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM-EPITAXY/, Electronics Letters, 33(14), 1997, pp. 1263-1264
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
14
Year of publication
1997
Pages
1263 - 1264
Database
ISI
SICI code
0013-5194(1997)33:14<1263:LCIIAS>2.0.ZU;2-7
Abstract
1.3 mu m wavelength strain-compensated InAsP/InGaP/InGaAsP/InP and com pressively-strained InAsP/InGaAsP/InP separate confinement heterostruc ture multiquantum well lasers grown by gas source molecular beam epita xy are demonstrated for the first time. Record low threshold current d ensities of 210A/cm(2) for 2mm long broad-area compressively-strained lasers were obtained.