ELABORATION OF BI2TE3 BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Bi2Te3 layers were elaborated for the first time using metal organic c hemical vapor deposition. The films composition is stoichiometric when the following conditions are verified: substrate temperature lower th an 500 degrees C, VI/V ratio greater than 3, TMBi partial pressure low er than 2 x 10(-4) atm. By X-ray diffraction and MEB observation, we n oticed the polycrystalline structure of the layers. The high thermoele ctric power (+190 mu V K-1 for the p-type layer and -94 mu V K-1 for t he n-type layer) of this material is promising for device applications . (C) 1997 Elsevier Science S.A.