EFFECTS OF ANNEALING ON TI SCHOTTKY BARRIERS ON N-TYPE GAN

Authors
HIRSCH MT DUXSTAD KJ HALLER EE
Citation
Mt. Hirsch et al., EFFECTS OF ANNEALING ON TI SCHOTTKY BARRIERS ON N-TYPE GAN, Electronics Letters, 33(1), 1997, pp. 95-96
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
1
Year of publication
1997
Pages
95 - 96
Database
ISI
SICI code
0013-5194(1997)33:1<95:EOAOTS>2.0.ZU;2-O
Abstract
The authors ivestigate the Schottky barrier heights of Ti films deposi ted on n-type GaN. The effective barrier height Phi(b0) is measured by current-voltage measurements, against temperature. An increasing barr ier height Phi(b0) from similar to 200meV (as-deposited) to 250meV aft er annealing at temperatures as low as 60 degrees C is observed. After annealing at 230 degrees C and above, a stable Phi(b0) of 450meV is m easured. The increase in Phi(b0) is not due to any macroscopic interfa cial reaction.