RESONANT INTERBAND TUNNELING DIODE WITH HIGH PEAK CURRENT-DENSITY

Authors
KITABAYASHI H WAHO T YAMAMOTO M
Citation
H. Kitabayashi et al., RESONANT INTERBAND TUNNELING DIODE WITH HIGH PEAK CURRENT-DENSITY, Electronics Letters, 33(1), 1997, pp. 102-104
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
1
Year of publication
1997
Pages
102 - 104
Database
ISI
SICI code
0013-5194(1997)33:1<102:RITDWH>2.0.ZU;2-Z
Abstract
Peak current densities (I-p) as high as 1.3 x 10(5) A/cm(2) with peak- to-valley current ratios of 3.7 are reported for InAs/AlSb/GaSb/AlSb/I nAs double-barrier resonant interband tunnelling diodes. The fact that 1-monolayer-thick AlSb barriers exist between the InAs and GaSb layer s is essential in obtaining such a high value of I-p.