Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Authors
Klein, PB Binari, SC Ikossi-Anastasiou, K Wickenden, AE Koleske, DD Henry, RL Katzer, DS
Citation
Pb. Klein et al., Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors, ELECTR LETT, 37(10), 2001, pp. 661-662
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
10
Year of publication
2001
Pages
661 - 662
Database
ISI
SICI code
0013-5194(20010510)37:10<661:IOTPCC>2.0.ZU;2-H
Abstract
Current collapse in ALGaN/GaN HEMTs has been investigated using photo-ionis ation spectroscopy techniques to probe the spatial origins of the traps pro ducing this effect. The results indicate that the responsible traps reside in the high-resistivity GaN buffer layer and are identical to those traps c ausing current collapse in GaN MESFETs.