A 0.15-mu m 60-GHz high-power composite channel GaInAs/ZnP HEMT with low gate current

This letter presents recent improvements and experimental results provided by a GaInAs/InP composite channel high electron mobility transistors (HEMT) , The devices exhibit good dc and rf performances. The 0.15-mum gate length devices have saturation current density of 750 mA/mm at V-GS = +0 V The Sc hottky characteristic is a typical reverse gate-to-drain breakdown voltage of -8 V. Gate current issued from impact ionization have been studied in th ese devices, in the first time, versus drain extension, At 60 GHz, an outpu t power of 385 mW/mm have been obtained in such a device with a 5.3 dB line ar gain and 41% drain efficiency which constitutes the state-of-the-art. These results studied are the first reported for a composite channel Al(0.6 5)In(0.35)AS/Ga(0.47)In(0.35)AS/lnP HEMT on InP substrate.