High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

Authors
Chen, CH Fang, YK Yang, CW Ting, SF Tsair, YS Wang, MF Lin, YM Yu, MC Chen, SC Yu, CH Liang, MS
Citation
Ch. Chen et al., High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies, IEEE ELEC D, 22(6), 2001, pp. 260-262
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
6
Year of publication
2001
Pages
260 - 262
Database
ISI
SICI code
0741-3106(200106)22:6<260:HU(NNS>2.0.ZU;2-F
Abstract
Ultrathin nitride/oxide (N/O) gate dielectric stacks with equivalent oxide thickness of 1.6 nm have been fabricated by combining remote plasma nitrida tion (RPN) and low pressure chemical vapor deposition (LPCVD) technologies. NMOSFETs with these gate stacks exhibit good interface properties, improve d subthreshold characteristics, low off-state currents, enhanced reliabilit y, and about one order of magnitude reduction in gate leakage current to th eir oxide counterparts.