A hydrogen-transport-based interface-trap-generation model for hot-carriesreliability prediction

Hot-carrier-induced interface-trap generation in n-channel MOSFETs is known to be related to hydrogen-mediated processes. We present a model for inter face-trap generation based on release and transport of mobile hydrogen in t he gate and sidewall oxides by injected carriers and its interactions with defect-precursors at the Si-SiO2 interface. Simulations based on this model are able to predict supply voltage, channel length, and process dependence of the rate of interface-trap generation in n-channel MOSFETs, This approa ch helps reduce empiricism and technology dependence usually associated wit h conventional hot-carrier lifetime prediction methods.