Cathodoluminescence of Cd4SiS6, Cd4SiSe6, and Si-doped CdS, CdSe, and CdTecrystals

Citation
In. Odin et al., Cathodoluminescence of Cd4SiS6, Cd4SiSe6, and Si-doped CdS, CdSe, and CdTecrystals, INORG MATER, 37(5), 2001, pp. 445-448
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
37
Issue
5
Year of publication
2001
Pages
445 - 448
Database
ISI
SICI code
0020-1685(200105)37:5<445:COCCAS>2.0.ZU;2-X
Abstract
CdS, CdSe, and CdTe single crystals were vapor-phase-doped with the corresp onding silicon chalcogenides under nearly equilibrium conditions. Cathodolu minescence studies revealed that the Si dopant produced new luminescence ce nters in the crystals. The cathodoluminescence spectra of Cd4SiS6 and Cd4Si Se6 crystals were measured. Metastable, sphalerite CdS < Si > and CdSe < Si > films were grown under highly nonequilibrium conditions. The maximum of edge emission in their spectra was redshifted as compared to the stable mat erials. The CdS < Si > and CdSe < Si > crystals were shown to be photosensi tive.