CdS, CdSe, and CdTe single crystals were vapor-phase-doped with the corresp
onding silicon chalcogenides under nearly equilibrium conditions. Cathodolu
minescence studies revealed that the Si dopant produced new luminescence ce
nters in the crystals. The cathodoluminescence spectra of Cd4SiS6 and Cd4Si
Se6 crystals were measured. Metastable, sphalerite CdS < Si > and CdSe < Si
> films were grown under highly nonequilibrium conditions. The maximum of
edge emission in their spectra was redshifted as compared to the stable mat
erials. The CdS < Si > and CdSe < Si > crystals were shown to be photosensi
tive.