Thermal oxidation of Ti and Pb thin films deposited on single-crystal silicon

Authors
Logacheva, VA Turenko, EA Khoviv, AM Yatsenko, OB
Citation
Va. Logacheva et al., Thermal oxidation of Ti and Pb thin films deposited on single-crystal silicon, INORG MATER, 37(5), 2001, pp. 466-468
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
37
Issue
5
Year of publication
2001
Pages
466 - 468
Database
ISI
SICI code
0020-1685(200105)37:5<466:TOOTAP>2.0.ZU;2-T
Abstract
Thin Pb-Ti-O films on single-crystal Si were prepared by magnetron sputteri ng followed by thermal oxidation of Pb/Ti/Si and Ti/Pb/Si structures. Oxida tion of Pb/Ti bilayers was found to yield lead oxides, which then react wit h Ti to form lead titanate. Ti/Pb bilayers on Si could be converted into st oichiometric lead titanate, through titanium and lead oxides, by oxidation between 870 and 1070 K. Some of the films exhibited ferroelectric propertie s.