Growth and electrical properties of Cs2Nb4O11 crystals

Citation
Ep. Kharitonova et al., Growth and electrical properties of Cs2Nb4O11 crystals, INORG MATER, 37(5), 2001, pp. 508-509
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
37
Issue
5
Year of publication
2001
Pages
508 - 509
Database
ISI
SICI code
0020-1685(200105)37:5<508:GAEPOC>2.0.ZU;2-Z
Abstract
Large, perfect Cs2Nb4O11 crystals were prepared by off-stoichiometric melt growth, and their electrical properties were studied. The crystals have a n oncentrosymmetric orthorhombic structure (sp. gr Pnn2) at room temperature and undergo a phase transition at 164 degreesC, which is accompanied by a s trong anomaly in c-axis dielectric permittivity and seems to be due to ferr oelectric ordering. The crystals exhibit high ionic conductivity.