Dielectric relaxation and conduction in the system Ba1-xLaxSn1-xCrxO3

Citation
S. Upadhyay et al., Dielectric relaxation and conduction in the system Ba1-xLaxSn1-xCrxO3, J MAT S-M E, 12(3), 2001, pp. 165-172
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
12
Issue
3
Year of publication
2001
Pages
165 - 172
Database
ISI
SICI code
0957-4522(2001)12:3<165:DRACIT>2.0.ZU;2-1
Abstract
Attempts have been made to synthesize the solid solution, Ba1-xLaxSn1-xCrxO 3 for x less than or equal to 0.20 and study its electrical behavior. It ha s been found that a single phase solid solution forms for compositions up t o x less than or equal to 0.10. The structure remains cubic. Grain size of the samples decreases with increasing x. Dielectric relaxation in these mat erials is attributed to reorientation of dipoles due to hopping of electron s among various oxidation states of Sn ions around oxygen vacancies. Using complex plane impedance analysis, it has been confirmed that dielectric rel axation and conduction occur by the same process. (C) 2001 Kluwer Academic Publishers.