Laser-induced thin film formation from a gaseous mixture of trimethylsilylacetylene and methyl acrylate

Under irradiation with N-2 laser light, gaseous trimethylsilylacetylene (TM eSiA) and a gaseous mixture of TMeSiA and methyl acrylate (MA) produced thi n films on an incident optical quartz window of an irradiation vessel. The product yield decreased with increasing partial pressure of TMeSiA. From th e analysis of FT-IR spectra and X-ray photoelectron spectra of the deposite d films, it was shown that Si-C bond of TMeSiA was cleaved by a two-photon absorption of N-2 laser light to produce trimethylsilyl radical and the sil anes, R(CH3)Si=CH2 (R: H3C-, CH dropC-). Trimethylsilyl radical reacted wit h MA at C=C and C=O bonds to produce Si-C acid Si-O bonds in the film depos ited from the gaseous mixture. The silanes were polymerized in each other t o produce a thin film from pure TMeSiA vapor. Under irradiation with a medi um pressure mercury lamp, a gaseous mixture of TMeSiA and MA produced aeros ol particles in addition to the film. Polymeric species of TMeSiA was more involved in the aerosol particles rather than in the film, suggesting that collisionally induced chemical reaction takes place efficiently between exc ited MA and TMeSiA molecules. (C) 2001 Elsevier Science B.V. All rights res erved.