The electrical and structural properties of C-60/Sb bilayers were investiga
ted. In situ direct-current conductivity measurement results indicate that
the doping of Sb into C-60 induces the C-60 order-disorder phase transition
temperature to increase to similar to 278 K. According to the results of a
transmission electron microscope and atomic force microscope study, such a
transition (near 278 K) implies the formation of an interfacial structure
of Sb-doped C-60 Annealing and the absorption of gases destroy the interfac
ial structure of Sb-doped C-60. A possible mechanism for such a phase trans
ition is discussed.