An improved levelized incomplete LU method and its application to 2D semiconductor device simulation

Numerical simulation of semiconductor devices plays a very important role i n the design and development of integrated circuits. We will present a new circuit simulator with an improved Levelized Incomplete LU method to perfor m such simulations. To have an environment for evaluating the interaction b etween a semiconductor device and a circuit, we use the equivalent circuit approach. This approach allows for simple representation carrier transport models of devices through equivalent circuit elements such as voltage contr olled current sources and capacitors. Therefore, we can perform mixed-level simulation in general circuit simulators. We will take a PN diode switchin g circuit and MOSFET as: examples to test our equivalent circuit model and the improved circuit simulator. The comparison between improved matrix solu tion method and the conventional method will he demonstrated too. We will a lso show our method yields better matrix solutions than conventional method s.