Depth of origin of sputtered atoms for elemental Al and Mg targets in physical vapor deposition processes

Citation
Jm. Bordes et P. Bauer, Depth of origin of sputtered atoms for elemental Al and Mg targets in physical vapor deposition processes, J VAC SCI A, 19(3), 2001, pp. 812-819
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
812 - 819
Database
ISI
SICI code
0734-2101(200105/06)19:3<812:DOOOSA>2.0.ZU;2-2
Abstract
The TRIM.SP Monte Carlo type program is used to calculate the escape depths fur sputtered aluminum and magnesium target materials in physical vapor de position processes involving argon plasma. Escape distributions are establi shed for all sputtered atoms, as well as for sputtered atoms at several ene rgies, in the case of normal impinging Ar ions. Distributions are also perf ormed for several incidence angles up to 80 degrees, in connection with rec oils in collision cascades at a given energy. Mean escape depth calculation s show that sputtered Mg atoms originate deeper underneath the surface comp ared to Al atoms, in accordance with their total stopping powers and sputte ring yields. But, as a whole, the majority of sputtered Al and Mg atoms wou ld come from the first two top layers. (C) 2001 American Vacuum Society.