Sm. Suh et al., Modeling particle formation during low-pressure silane oxidation: Detailedchemical kinetics and aerosol dynamics, J VAC SCI A, 19(3), 2001, pp. 940-951
A detailed chemical kinetic model is presented for silicon oxide clustering
that leads to particle nucleation during low-pressure silane oxidation. Qu
antum Rice-Ramsperger- Kassel theory was applied to an existing high-pressu
re silane oxidation mechanism to obtain estimates for the pressure dependen
ce of rate parameters. Four classes of clustering pathways were considered
based on current knowledge of reaction kinetics and cluster properties in t
he Si-H-O system. The species conservation equations and a moment-type aero
sol dynamics model were formulated for a batch reactor undergoing homogeneo
us nucleation and particle growth by surface reactions and coagulation. The
chemical kinetics model was coupled to the aerosol dynamics model, and tim
e-dependent zero-dimensional simulations were conducted. The effects of pre
ssure and temperature were examined, and the main contributing processes to
particle formation and growth were assessed, for conditions around 0.8 Tor
r, 773 K, and an initial oxygen-to-silane ratio of 15. (C) 2001 American Va
cuum Society.