Modeling particle formation during low-pressure silane oxidation: Detailedchemical kinetics and aerosol dynamics

Citation
Sm. Suh et al., Modeling particle formation during low-pressure silane oxidation: Detailedchemical kinetics and aerosol dynamics, J VAC SCI A, 19(3), 2001, pp. 940-951
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
940 - 951
Database
ISI
SICI code
0734-2101(200105/06)19:3<940:MPFDLS>2.0.ZU;2-E
Abstract
A detailed chemical kinetic model is presented for silicon oxide clustering that leads to particle nucleation during low-pressure silane oxidation. Qu antum Rice-Ramsperger- Kassel theory was applied to an existing high-pressu re silane oxidation mechanism to obtain estimates for the pressure dependen ce of rate parameters. Four classes of clustering pathways were considered based on current knowledge of reaction kinetics and cluster properties in t he Si-H-O system. The species conservation equations and a moment-type aero sol dynamics model were formulated for a batch reactor undergoing homogeneo us nucleation and particle growth by surface reactions and coagulation. The chemical kinetics model was coupled to the aerosol dynamics model, and tim e-dependent zero-dimensional simulations were conducted. The effects of pre ssure and temperature were examined, and the main contributing processes to particle formation and growth were assessed, for conditions around 0.8 Tor r, 773 K, and an initial oxygen-to-silane ratio of 15. (C) 2001 American Va cuum Society.