Absolute sputtering yield of Ti/TiN by Ar+/N+ at 400-700 eV

Ti and TiN films are used as diffusion barrier layers in Al and Cu metalliz ation. They are often produced using physical-vapor-deposition techniques a nd are subject to energetic particle bombardment during subsequent processe s. Therefore, the sputtering yield for ion-induced physical sputtering is i mportant. The absolute sputtering yields of Ti and TiN target materials wit h 400-700 eV normally incident N and Ar ions are measured here. The experim ental values are favorably compared to simulation results from TRIM.SP, whi ch is a vectorized Monte Carlo code simulating ion-surface interaction usin g a binary collision mode. The phenomenon of reactive sputtering of Ti with incident N is also discussed. (C) 2001 American Vacuum Society.