Surface segregation of hexagonal boron nitride and its surface properties

Citation
Ys. Kim et al., Surface segregation of hexagonal boron nitride and its surface properties, J VAC SCI A, 19(3), 2001, pp. 1013-1017
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
1013 - 1017
Database
ISI
SICI code
0734-2101(200105/06)19:3<1013:SSOHBN>2.0.ZU;2-E
Abstract
The synthesis of uniform hexagonal boron nitride (h-BN) layer has been succ essfully achieved by a surface segregation method using a helicon wave plas ma enhanced radio frequency magnetron sputtering system followed by bz situ annealing in an ultrahigh vacuum. Auger electron spectroscopy and x-ray ph otoelectron spectroscopy revealed that the surface of codeposited Cu/B/N wa s covered by the segregated h-BN. Atomic force microscopy and scanning tunn el microscopy indicates that the attractive force on the surface segregated h-BN layer is uniformly distributed to an extent of less than 1 nN and exh ibited a good insulating property. This result suggests that the surface se gregation of h-BN is an effective method to make a template layer for tribo logical coating, electric microdevices and nanostructured devices. (C) 2001 American Vacuum Society.